硅電容式壓力傳感器的(de)(de)敏感(gan)(gan)元件(jian)是半(ban)導體薄(bo)膜,它可以由單晶(jing)硅、多晶(jing)硅等利用半(ban)導體工(gong)(gong)藝制作(zuo)(zuo)而(er)成。典型(xing)的(de)(de)電(dian)(dian)(dian)(dian)(dian)容(rong)式(shi)傳感(gan)(gan)器(qi)(qi)由上下(xia)電(dian)(dian)(dian)(dian)(dian)極(ji)、絕緣體和襯底構成。當薄(bo)膜受壓力(li)(li)作(zuo)(zuo)用時(shi),薄(bo)膜會發(fa)生(sheng)一定(ding)的(de)(de)變(bian)形,因(yin)此,上下(xia)電(dian)(dian)(dian)(dian)(dian)極(ji)之間(jian)的(de)(de)距(ju)離發(fa)生(sheng)一定(ding)的(de)(de)變(bian)化,從(cong)而(er)使電(dian)(dian)(dian)(dian)(dian)容(rong)發(fa)生(sheng)變(bian)化。但電(dian)(dian)(dian)(dian)(dian)容(rong)式(shi)壓力(li)(li)傳感(gan)(gan)器(qi)(qi)的(de)(de)電(dian)(dian)(dian)(dian)(dian)容(rong)與上下(xia)電(dian)(dian)(dian)(dian)(dian)極(ji)之間(jian)的(de)(de)距(ju)離的(de)(de)關系(xi)是非線性(xing)關系(xi),因(yin)此,要用具有(you)補(bu)償(chang)功能的(de)(de)測量電(dian)(dian)(dian)(dian)(dian)路(lu)對輸出電(dian)(dian)(dian)(dian)(dian)容(rong)進行(xing)非線性(xing)補(bu)償(chang)。由于高溫(wen)(wen)壓力(li)(li)傳感(gan)(gan)器(qi)(qi)工(gong)(gong)作(zuo)(zuo)在(zai)高溫(wen)(wen)環境下(xia),補(bu)償(chang)電(dian)(dian)(dian)(dian)(dian)路(lu)會受到環境溫(wen)(wen)度的(de)(de)影響,從(cong)而(er)產生(sheng)較(jiao)大(da)的(de)(de)誤差。基(ji)于模型(xing)識(shi)別(bie)的(de)(de)高溫(wen)(wen)壓力(li)(li)傳感(gan)(gan)器(qi)(qi),正是為了避免補(bu)償(chang)電(dian)(dian)(dian)(dian)(dian)路(lu)在(zai)高溫(wen)(wen)環境下(xia)工(gong)(gong)作(zuo)(zuo)產生(sheng)較(jiao)大(da)誤差而(er)設計的(de)(de),其設計方案是把傳感(gan)(gan)器(qi)(qi)件(jian)與放大(da)電(dian)(dian)(dian)(dian)(dian)路(lu)分(fen)離,通過模型(xing)識(shi)別(bie)來得到所測環境的(de)(de)壓力(li)(li)。高溫(wen)(wen)工(gong)(gong)作(zuo)(zuo)區溫(wen)(wen)度可達350 ℃。傳感(gan)(gan)器(qi)(qi)件(jian)由鉑電(dian)(dian)(dian)(dian)(dian)阻和電(dian)(dian)(dian)(dian)(dian)容(rong)式(shi)壓力(li)(li)傳感(gan)(gan)器(qi)(qi)構成。

高溫(wen)(wen)壓(ya)力傳感(gan)器(qi)由(you)(you)硅(gui)(gui)(gui)膜片(pian)(pian)、襯(chen)底、下(xia)電(dian)(dian)(dian)(dian)(dian)極(ji)(ji)和(he)(he)(he)絕緣(yuan)層(ceng)(ceng)(ceng)構成(cheng)(cheng)。其中下(xia)電(dian)(dian)(dian)(dian)(dian)極(ji)(ji)位于(yu)厚(hou)(hou)支撐的(de)(de)(de)(de)襯(chen)底上(shang)。電(dian)(dian)(dian)(dian)(dian)極(ji)(ji)上(shang)蒸(zheng)鍍一(yi)(yi)層(ceng)(ceng)(ceng)絕緣(yuan)層(ceng)(ceng)(ceng)。硅(gui)(gui)(gui)膜片(pian)(pian)則是利用(yong)各向異性腐蝕(shi)(shi)技術,在一(yi)(yi)片(pian)(pian)硅(gui)(gui)(gui)片(pian)(pian)上(shang)從正反(fan)面腐蝕(shi)(shi)形(xing)成(cheng)(cheng)的(de)(de)(de)(de)。上(shang)下(xia)電(dian)(dian)(dian)(dian)(dian)極(ji)(ji)的(de)(de)(de)(de)間隙(xi)由(you)(you)硅(gui)(gui)(gui)片(pian)(pian)的(de)(de)(de)(de)腐蝕(shi)(shi)深度(du)(du)決定。硅(gui)(gui)(gui)膜片(pian)(pian)和(he)(he)(he)襯(chen)底利用(yong)鍵合(he)技術鍵合(he)在一(yi)(yi)起(qi),形(xing)成(cheng)(cheng)具有一(yi)(yi)定穩定性的(de)(de)(de)(de)硅(gui)(gui)(gui)膜片(pian)(pian)電(dian)(dian)(dian)(dian)(dian)容(rong)壓(ya)力傳感(gan)器(qi)[2] 。由(you)(you)于(yu)鉑(bo)電(dian)(dian)(dian)(dian)(dian)阻耐高溫(wen)(wen),且對溫(wen)(wen)度(du)(du)敏(min)感(gan),選用(yong)鉑(bo)電(dian)(dian)(dian)(dian)(dian)阻,既(ji)可以(yi)當(dang)普通電(dian)(dian)(dian)(dian)(dian)阻使(shi)用(yong),又可以(yi)作(zuo)為(wei)(wei)(wei)溫(wen)(wen)度(du)(du)傳感(gan)器(qi)用(yong)以(yi)探測(ce)(ce)被(bei)測(ce)(ce)環(huan)境(jing)的(de)(de)(de)(de)溫(wen)(wen)度(du)(du)。金屬鉑(bo)電(dian)(dian)(dian)(dian)(dian)阻和(he)(he)(he)硅(gui)(gui)(gui)膜片(pian)(pian)的(de)(de)(de)(de)參數為(wei)(wei)(wei):0 ℃時鉑(bo)電(dian)(dian)(dian)(dian)(dian)阻值為(wei)(wei)(wei)1 000Ω;電(dian)(dian)(dian)(dian)(dian)阻率為(wei)(wei)(wei)1. 052 631 6 ×10 - 5Ω?cm;密(mi)度(du)(du)為(wei)(wei)(wei)21 440 kg/ m3 ;比熱為(wei)(wei)(wei)132. 51 J/ (kg?K) 、熔斷溫(wen)(wen)度(du)(du)為(wei)(wei)(wei)1 769 ℃,故鉑(bo)電(dian)(dian)(dian)(dian)(dian)阻可加工為(wei)(wei)(wei)寬度(du)(du)為(wei)(wei)(wei)0. 02 mm;厚(hou)(hou)度(du)(du)為(wei)(wei)(wei)0. 2μm;總(zong)長度(du)(du)為(wei)(wei)(wei)3 800μm,制(zhi)作(zuo)成(cheng)(cheng)鋸齒狀,可在幅值為(wei)(wei)(wei)10 V 的(de)(de)(de)(de)階躍信(xin)號(hao)下(xia)正常工作(zuo)。電(dian)(dian)(dian)(dian)(dian)容(rong)式壓(ya)力傳感(gan)器(qi)的(de)(de)(de)(de)上(shang)下(xia)電(dian)(dian)(dian)(dian)(dian)極(ji)(ji)的(de)(de)(de)(de)間隙(xi)為(wei)(wei)(wei)3μm、圓形(xing)平板電(dian)(dian)(dian)(dian)(dian)容(rong)上(shang)下(xia)電(dian)(dian)(dian)(dian)(dian)極(ji)(ji)的(de)(de)(de)(de)半徑為(wei)(wei)(wei)73μm、其電(dian)(dian)(dian)(dian)(dian)容(rong)值為(wei)(wei)(wei)50 pF。

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